NTD6415ANT4G
MOSFET N-CH 100V 23A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTD6415ANT4G is a high-performance N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 23A at 25°C (Tc). With a maximum power dissipation of 83W (Tc), it is suitable for power management in automotive and industrial sectors. The device exhibits a low On-Resistance (Rds On) of 55mOhm at 23A and 10V, minimizing conduction losses. Key parameters include a Gate Charge (Qg) of 29 nC (Max) at 10V and an Input Capacitance (Ciss) of 700 pF (Max) at 25V, facilitating efficient switching. The NTD6415ANT4G is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package and operates within a temperature range of -55°C to 175°C (TJ). It is supplied on tape and reel.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 23A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 25 V |
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