NTD6415AN-1G
MOSFET N-CH 100V 23A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD6415AN-1G is an N-Channel MOSFET designed for high-efficiency power switching applications. Featuring a Drain-to-Source Voltage (Vdss) of 100 V and a continuous drain current (Id) of 23 A at 25°C, this component offers a maximum power dissipation of 83 W. The Rds On is specified at a maximum of 55 mOhm at 23 A and 10 V gate drive. Key parameters include a Gate Charge (Qg) of 29 nC and Input Capacitance (Ciss) of 700 pF, both measured at 10 V and 25 V respectively. This MOSFET utilizes Metal Oxide technology and is housed in a TO-251-3 Short Leads, IPAK package, suitable for through-hole mounting. It operates across a temperature range of -55°C to 175°C. Applications include automotive, industrial motor control, and power supply designs.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 23A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 25 V |
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