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NTD60N03T4

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NTD60N03T4

MOSFET N-CH 28V 60A DPAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi NTD60N03T4 is an N-Channel Power MOSFET designed for robust performance in demanding applications. This device features a drain-to-source voltage (Vdss) of 28 V and a continuous drain current (Id) of 60 A at 25°C (Tc), with a maximum power dissipation of 75 W (Tc). The NTD60N03T4 offers a low on-resistance (Rds On) of 7.5 mOhm at 30 A and 10 V, coupled with a gate charge (Qg) of 30 nC at 4.5 V. It supports drive voltages from 4.5 V to 10 V and a maximum gate-source voltage (Vgs) of ±20 V. With surface mount capability in a TO-252-3, DPAK package, this MOSFET is suitable for applications in automotive, industrial power control, and power management systems. The operating temperature range is -55°C to 150°C (TJ). This component is supplied on tape and reel.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Rds On (Max) @ Id, Vgs7.5mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)75W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageDPAK
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)28 V
Gate Charge (Qg) (Max) @ Vgs30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds2150 pF @ 24 V

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