NTD60N03-001
MOSFET N-CH 28V 60A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTD60N03-001, an N-Channel power MOSFET, features a 28V drain-source voltage and a continuous drain current capability of 60A at 25°C (Tc). This device offers a low on-resistance of 7.5mOhm maximum at 30A and 10V Vgs. With a maximum power dissipation of 75W (Tc) and a gate charge of 30 nC at 4.5V, it is designed for efficient power switching applications. The input capacitance (Ciss) is 2150 pF maximum at 24V. Mounting is facilitated via through-hole, utilizing the TO-251-3 Short Leads, IPAK, or TO-251AA package. Operating temperature ranges from -55°C to 150°C (TJ). Drive voltage requirements are between 4.5V and 10V. This component is suitable for use in automotive and industrial power control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 28 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2150 pF @ 24 V |
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