NTD60N02RT4G
MOSFET N-CH 25V 8.5A/32A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD60N02RT4G is an N-Channel Power MOSFET designed for efficient switching applications. This component features a Drain-Source Voltage (Vdss) of 25V and offers a continuous drain current capability of 8.5A at 25°C ambient temperature and 32A continuous drain current at 25°C case temperature. With a maximum Rds(on) of 10.5mOhm at 20A and 10V, it ensures low conduction losses. The device supports gate drive voltages from 4.5V to 10V. Key parameters include a Gate Charge (Qg) of 14 nC at 4.5V and an Input Capacitance (Ciss) of 1330 pF at 20V. The NTD60N02RT4G is housed in a DPAK (TO-252-3) surface-mount package, facilitating integration into compact designs. It operates across a wide temperature range from -55°C to 175°C. Typical applications for this MOSFET include power management, automotive systems, and industrial motor control.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.5A (Ta), 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 10.5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.25W (Ta), 58W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1330 pF @ 20 V |
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