NTD60N02RT4
MOSFET N-CH 25V 8.5A/32A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD60N02RT4 is an N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a drain-to-source voltage (Vdss) of 25 V and offers continuous drain current (Id) capabilities of 8.5 A at ambient temperature (Ta) and 32 A at case temperature (Tc). The NTD60N02RT4 exhibits a low on-resistance (Rds On) of 10.5 mOhm at 20 A and 10 V, with a gate-source voltage (Vgs) drive range from 4.5 V to 10 V. Power dissipation is rated at 1.25 W (Ta) and 58 W (Tc). Key parameters include a gate charge (Qg) of 14 nC at 4.5 V and input capacitance (Ciss) of 1330 pF at 20 V. The NTD60N02RT4 is packaged in a TO-252-3, DPAK (SC-63) for surface mounting and operates across a temperature range of -55°C to 175°C. This component is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.5A (Ta), 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 10.5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.25W (Ta), 58W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1330 pF @ 20 V |
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