NTD60N02R-35G
MOSFET N-CH 25V 8.5A/32A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTD60N02R-35G is an N-Channel Power MOSFET engineered for efficient power switching applications. Featuring a Drain-to-Source Voltage (Vdss) of 25V, this device offers a continuous drain current capability of 8.5A at ambient temperature (Ta) and 32A at case temperature (Tc). The NTD60N02R-35G exhibits a low On-Resistance (Rds On) of 10.5mOhm at 20A and 10V, with a gate drive range of 4.5V to 10V. Key parameters include a maximum gate charge (Qg) of 14 nC at 4.5V and an input capacitance (Ciss) of 1330 pF at 20V. It is housed in a TO-251-3 Stub Leads, IPAK package for through-hole mounting, suitable for operation across a wide temperature range of -55°C to 175°C. The device's power dissipation is rated at 1.25W (Ta) and 58W (Tc). This component is utilized in various industrial sectors including automotive and general power control.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.5A (Ta), 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 10.5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.25W (Ta), 58W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1330 pF @ 20 V |
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