NTD60N02R-1G
MOSFET N-CH 25V 8.5A/32A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD60N02R-1G is an N-channel MOSFET designed for through-hole mounting in an IPAK package. This device features a drain-source voltage (Vdss) of 25 V and offers a continuous drain current (Id) of 8.5 A at 25°C ambient temperature and 32 A at 25°C case temperature. The maximum power dissipation is 1.25 W (Ta) and 58 W (Tc). Key electrical characteristics include a low on-resistance (Rds On) of 10.5 mOhm at 20 A and 10 V, with a gate-source voltage (Vgs) range for optimal performance from 4.5 V to 10 V. Gate charge (Qg) is specified at 14 nC max at 4.5 V, and input capacitance (Ciss) is 1330 pF max at 20 V. Operating temperature ranges from -55°C to 175°C. This MOSFET is suitable for applications in power management and automotive sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.5A (Ta), 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 10.5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.25W (Ta), 58W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1330 pF @ 20 V |
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