NTD60N02R
MOSFET N-CH 25V 8.5A/32A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD60N02R is an N-Channel Power MOSFET designed for efficient switching in demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 25V and offers continuous drain current capabilities of 8.5A at ambient temperature (Ta) and 32A at case temperature (Tc). Its low on-resistance (Rds On) of 10.5mOhm at 20A and 10V gate drive, coupled with a maximum power dissipation of 58W (Tc), makes it suitable for power management solutions.
Key electrical characteristics include a gate charge (Qg) of 14 nC at 4.5V and input capacitance (Ciss) of 1330 pF at 20V. The MOSFET operates across a wide temperature range from -55°C to 175°C (TJ) and is available in a TO-252-3, DPAK package for surface mounting. This component finds application in automotive, industrial power control, and various other high-power switching environments. The maximum gate-source voltage (Vgs) is ±20V, with a threshold voltage (Vgs(th)) of 2V at 250µA.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.5A (Ta), 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 10.5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.25W (Ta), 58W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1330 pF @ 20 V |
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