NTD5C648NLT4G
MOSFET N-CH 60V 22A/91A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD5C648NLT4G is a 60V N-Channel Power MOSFET designed for demanding applications. This device features a low Rds(on) of 4.1mOhm at 45A and 10V Vgs, enabling efficient power switching. Continuous drain current capabilities are rated at 22A (Ta) and 91A (Tc), with a maximum power dissipation of 4.4W (Ta) and 76W (Tc). Key electrical characteristics include a gate charge of 17 nC at 10V and input capacitance of 2900 pF at 30V. The NTD5C648NLT4G utilizes surface mount technology, housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package. Operating temperature range is -55°C to 175°C (TJ). This component is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Ta), 91A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.1mOhm @ 45A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 4.4W (Ta), 76W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2900 pF @ 30 V |
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