NTD5C464NT4G
MOSFET N-CH 40V 19A/59A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD5C464NT4G is a 40V N-Channel Power MOSFET designed for demanding applications. This device features a low Rds(on) of 5.8mOhm at 30A and 10V Vgs, facilitating efficient power delivery. It offers a continuous drain current of 19A at 25°C ambient and up to 59A at 25°C case temperature, with a maximum power dissipation of 4W ambient and 40W case. The NTD5C464NT4G is packaged in a DPAK (TO-252-3) surface mount configuration and operates across a wide temperature range of -55°C to 175°C. Key electrical parameters include a gate charge of 20 nC @ 10V and input capacitance of 1200 pF @ 20V. This component is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Ta), 59A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.8mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 4W (Ta), 40W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 20 V |
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