NTD5C446NT4G
MOSFET N-CH 40V 110A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD5C446NT4G is an N-Channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 40V and a continuous drain current (Id) of 110A at 25°C. With a low on-resistance (Rds On) of 3.5mOhm at 50A and 10V gate drive, it minimizes conduction losses. The device offers a maximum power dissipation of 66W at 25°C (Tc) and operates across a wide temperature range of -55°C to 175°C (TJ). Key parameters include a gate charge (Qg) of 34.3 nC at 10V and input capacitance (Ciss) of 2300 pF at 20V, with a maximum gate-source voltage (Vgs) of ±20V. The NTD5C446NT4G is housed in a DPAK (TO-252-3) surface mount package and is supplied in Tape & Reel. This MOSFET is utilized in power switching, automotive, and industrial applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 66W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 34.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2300 pF @ 20 V |
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