NTD5C434NT4G
MOSFET N-CH 40V 33A/160A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTD5C434NT4G is an N-Channel Power MOSFET designed for high-efficiency power management applications. This TO-252-3, DPAK packaged device offers a continuous drain current of 33A at 25°C ambient and 160A at 25°C case temperature, with a drain-to-source voltage of 40V. Key performance metrics include a maximum on-resistance of 2.1mOhm at 50A and 10V gate drive, and a maximum gate charge of 80.6 nC at 10V. The device supports a maximum power dissipation of 4.7W (ambient) and 120W (case), operating across a temperature range of -55°C to 175°C. This component is commonly utilized in automotive, industrial power supplies, and high-power switching applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 33A (Ta), 160A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.1mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 4.7W (Ta), 120W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 80.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5400 pF @ 25 V |
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