NTD5867NL-1G
MOSFET N-CH 60V 20A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD5867NL-1G is an N-Channel Power MOSFET designed for demanding applications. This through-hole component features a Drain-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 20A at 25°C (Tc). With a maximum power dissipation of 36W (Tc), it offers robust performance. The Rds On (Max) is specified at 39mOhm at 10A, 10V, ensuring efficient power transfer. Key parameters include a gate charge (Qg) of 15 nC at 10V and input capacitance (Ciss) of 675 pF at 25V. The device supports drive voltages from 4.5V to 10V and has a Vgs(th) of 2.5V at 250µA, with a maximum gate-source voltage tolerance of ±20V. Packaged in an IPAK (TO-251-3 Short Leads) and supplied in tubes, the NTD5867NL-1G is suitable for use in power management, automotive, and industrial control systems. It operates across a wide temperature range of -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 36W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 675 pF @ 25 V |
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