NTD5865NT4G
MOSFET N-CH 60V 43A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTD5865NT4G is an N-Channel Power MOSFET designed for demanding applications. This device features a 60 V breakdown voltage and a continuous drain current capability of 43 A at 25°C (Tc), with a maximum power dissipation of 71 W (Tc). The low on-resistance of 18 mOhm at 20 A and 10 V gate drive ensures efficient power transfer. Key parameters include a gate charge of 23 nC at 10 V and input capacitance of 1261 pF at 25 V. The MOSFET is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, ideal for automated assembly. Operating temperature range is -55°C to 175°C (TJ). This component is suitable for use in automotive, industrial power control, and power supply applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 43A (Tc) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 71W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1261 pF @ 25 V |
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