NTD5865NL-1G
MOSFET N-CH 60V 46A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTD5865NL-1G is a N-Channel Power MOSFET designed for through-hole mounting in an IPAK package. This component offers a drain-source voltage (Vdss) of 60 V and a continuous drain current (Id) of 46 A at 25°C. Its low on-resistance (Rds On) of 16 mOhm at 20 A and 10 V gate-source voltage, coupled with a maximum power dissipation of 71 W (Tc), makes it suitable for applications requiring efficient power switching. Key parameters include a gate charge (Qg) of 29 nC at 10 V and an input capacitance (Ciss) of 1400 pF at 25 V. It operates across a temperature range of -55°C to 175°C (TJ). This MOSFET is utilized in various industrial applications, including power supplies and motor control.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 46A (Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 71W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V |
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