NTD5862NT4G
MOSFET N-CH 60V 98A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi NTD5862NT4G is a N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a drain-to-source voltage (Vdss) of 60 V and a continuous drain current (Id) of 98 A at 25°C (Tc). The ON resistance (Rds On) is a maximum of 5.7 mOhm at 45 A and 10 V gate drive. With a power dissipation of 115 W (Tc), it is suitable for demanding thermal environments. The NTD5862NT4G utilizes MOSFET technology and is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package, facilitating surface mounting. Key parameters include a gate charge (Qg) of 82 nC at 10 V and input capacitance (Ciss) of 6000 pF at 25 V. This component finds application in automotive and industrial power management systems. It operates across a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 98A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.7mOhm @ 45A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 115W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 82 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6000 pF @ 25 V |
Request a Quote
Clients Also Buy
FCP850N80Z
MOSFET N-CH 800V 8A TO220-3
MCH3376-TL-W
MOSFET P-CH 20V 1.5A 3MCPH
MCH3476-TL-H
MOSFET N-CH 20V 2A SC70FL/MCPH3
