NTD5862N-1G
MOSFET N-CH 60V 98A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD5862N-1G is an N-Channel Power MOSFET designed for high-current applications. This device features a Drain-to-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 98A at 25°C (Tc). The low on-resistance (Rds On) of 5.7mOhm at 45A and 10V gate drive minimizes conduction losses. With a maximum power dissipation of 115W (Tc), the NTD5862N-1G is suitable for demanding thermal environments. Key parameters include a Gate Charge (Qg) of 82 nC at 10V and an input capacitance (Ciss) of 6000 pF at 25V. The MOSFET is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63 for surface mounting. This component is utilized in industrial power supplies, automotive systems, and electric vehicle charging infrastructure. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 98A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.7mOhm @ 45A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 115W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 82 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6000 pF @ 25 V |
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