NTD5807NT4G
MOSFET N-CH 40V 23A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD5807NT4G is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 40V and a continuous Drain Current (Id) capability of 23A at 25°C (Tc). With a maximum power dissipation of 33W (Tc) and a low on-resistance of 31mOhm at 5A, 10V, it facilitates efficient power switching. The device operates with gate drive voltages between 4.5V and 10V, and has a gate charge of 20nC at 10V. Input capacitance (Ciss) is a maximum of 603pF at 25V. The NTD5807NT4G utilizes Surface Mount technology, housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package. It is suitable for operation across a wide temperature range from -55°C to 175°C (TJ). This MOSFET finds application in industrial power control, automotive systems, and power supply designs.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Rds On (Max) @ Id, Vgs | 31mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 33W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 603 pF @ 25 V |