NTD5805NT4G
MOSFET N-CH 40V 51A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTD5805NT4G is a N-Channel Power MOSFET designed for demanding applications. This device features a 40V drain-source breakdown voltage and a continuous drain current capability of 51A at 25°C (Tc), with a maximum power dissipation of 47W (Tc). The low on-resistance of 9.5mOhm at 15A and 10V gate-source voltage (Vgs) ensures efficient power handling. It operates with a gate-source voltage range of ±20V and a threshold voltage (Vgs(th)) of 3.5V at 250µA. Key parameters include a gate charge (Qg) of 80 nC at 10V and an input capacitance (Ciss) of 1725 pF at 25V. The NTD5805NT4G is available in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, supplied on tape and reel. This MOSFET is suitable for use in automotive, industrial, and power supply applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 51A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.5mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 47W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1725 pF @ 25 V |