NTD5414NT4G
MOSFET N-CH 60V 24A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD5414NT4G is an N-Channel MOSFET designed for demanding applications with a Drain-Source Voltage (Vdss) of 60V. This component features a low On-Resistance (Rds On) of 37mOhm at 24A and 10V Vgs, contributing to efficient power handling. With a continuous drain current capability of 24A (Ta) and a maximum power dissipation of 55W (Tc), it is well-suited for power management circuits. The device offers a gate charge of 48 nC at 10V and an input capacitance of 1200 pF at 25V. Packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63, it supports surface mounting and operates across a temperature range of -55°C to 175°C. This MOSFET is commonly utilized in automotive and industrial power switching applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Ta) |
| Rds On (Max) @ Id, Vgs | 37mOhm @ 24A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 55W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V |