NTD5413NT4G
MOSFET N-CH 60V 30A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD5413NT4G is an N-Channel Power MOSFET designed for efficient power switching applications. Featuring a Drain-Source Voltage (Vdss) of 60 V and a continuous drain current (Id) of 30 A at 25°C, this device offers a low on-resistance (Rds On) of 26 mOhm maximum at 20 A and 10 V gate drive. The MOSFET is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, enabling robust thermal performance with a power dissipation of 68 W at the case temperature. Key parameters include a gate charge (Qg) of 46 nC maximum at 10 V and an input capacitance (Ciss) of 1725 pF maximum at 25 V. The operating temperature range is -55°C to 175°C. This component finds application in various industrial sectors, including automotive and power supply design.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 68W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1725 pF @ 25 V |