NTD5407NT4G
MOSFET N-CH 40V 7.6A/38A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD5407NT4G is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a 40V drain-source breakdown voltage and offers a continuous drain current capability of 7.6A at a typical ambient temperature (Ta) and 38A at a case temperature (Tc). Its low on-resistance of 26mOhm at 20A and 10V gate-source voltage ensures minimal conduction losses. The NTD5407NT4G supports a wide operating temperature range from -55°C to 175°C (TJ) and is packaged in a TO-252-3, DPAK surface-mount configuration, suitable for automated assembly. Power dissipation is rated at 2.9W (Ta) and 75W (Tc), accommodating demanding thermal requirements. This MOSFET is commonly utilized in automotive, industrial control, and power supply designs where robust and efficient switching performance is critical.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.6A (Ta), 38A (Tc) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.9W (Ta), 75W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 32 V |
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