NTD5407NG
MOSFET N-CH 40V 7.6A/38A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTD5407NG is a N-Channel MOSFET designed for robust power switching applications. This device features a 40V Drain-Source Voltage (Vdss) and supports a continuous drain current of 7.6A at 25°C ambient temperature, scaling to 38A at 25°C case temperature. With a maximum power dissipation of 75W (Tc), it is suitable for demanding thermal environments. The NTD5407NG exhibits a low on-resistance of 26mOhm at 20A and 10V gate-source voltage. It is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, facilitating efficient board assembly. Key parameters include a maximum Gate Charge (Qg) of 20 nC at 10V and an input capacitance (Ciss) of 1000 pF at 32V. This component finds utility in various industries including automotive and industrial power management.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.6A (Ta), 38A (Tc) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 32 V |
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