NTD5406NT4G
MOSFET N-CH 40V 12.2A/70A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD5406NT4G is a 40V N-Channel Power MOSFET designed for demanding applications. This device features a low Rds(on) of 10mOhm at 30A and 10V, facilitating efficient power transfer. It offers a continuous drain current capability of 12.2A at 25°C ambient and 70A at 25°C case temperature, with a maximum power dissipation of 3W (Ta) and 100W (Tc). The NTD5406NT4G utilizes a TO-252-3, DPAK surface mount package, suitable for automated assembly. Key electrical parameters include a gate charge (Qg) of 45 nC at 10V and input capacitance (Ciss) of 2500 pF at 32V. This component finds application in power management, automotive systems, and industrial controls.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12.2A (Ta), 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 100W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 32 V |
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