NTD5406NG
MOSFET N-CH 40V 12.2A/70A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTD5406NG is an N-Channel Power MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 40V and offers a continuous drain current of 12.2A at a case temperature of 25°C (12.2A @ Ta) and 70A at a case temperature of 25°C (70A @ Tc). The low on-resistance is specified as a maximum of 10mOhm at 30A and 10V gate drive. It supports gate drive voltages from 5V to 10V, with a maximum gate-source voltage (Vgs) of ±20V and a threshold voltage (Vgs(th)) of 3.5V at 250µA. Key parameters include a maximum gate charge (Qg) of 45 nC at 10V and an input capacitance (Ciss) of 2500 pF at 32V. The NTD5406NG is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, capable of dissipating up to 3W (Ta) or 100W (Tc). This component is suitable for use in automotive, industrial, and power supply applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12.2A (Ta), 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 100W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 32 V |
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