NTD50N03RT4G
MOSFET N-CH 25V 7.8A/45A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTD50N03RT4G, an N-Channel Power MOSFET, features a 25 V drain-source breakdown voltage and a continuous drain current of 7.8 A at 25°C ambient and 45 A at 25°C case temperature. This device offers a low on-resistance of 12 mOhm maximum at 30 A and 11.5 V gate-source voltage. Key parameters include a maximum gate charge of 15 nC at 11.5 V and input capacitance of 750 pF maximum at 12 V drain-source voltage. The NTD50N03RT4G is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, designed for efficient thermal management with a power dissipation of 1.5 W ambient and 50 W case. Operating temperature ranges from -55°C to 175°C. This component is commonly utilized in automotive and industrial applications requiring robust power switching capabilities.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.8A (Ta), 45A (Tc) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 30A, 11.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 11.5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 11.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 750 pF @ 12 V |
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