NTD50N03R-35G
MOSFET N-CH 25V 7.8A/45A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD50N03R-35G is an N-Channel Power MOSFET designed for efficient power switching applications. Featuring a Vds of 25V and a continuous drain current capability of 7.8A at ambient temperature (45A at case temperature), this component offers robust performance. Its low on-resistance of 12mOhm at 30A and 11.5V gate drive voltage minimizes conduction losses. The device has a maximum gate charge of 15 nC at 11.5V and an input capacitance of 750 pF at 12V.
The NTD50N03R-35G is housed in a TO-251-3 Stub Leads, IPAK package, suitable for through-hole mounting. It supports a wide operating temperature range from -55°C to 175°C (TJ) and can dissipate up to 1.5W (Ta) or 50W (Tc). This MOSFET is utilized in various industrial sectors including automotive and power supply designs.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.8A (Ta), 45A (Tc) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 30A, 11.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 11.5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 11.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 750 pF @ 12 V |
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