NTD50N03R-1G
MOSFET N-CH 25V 7.8A/45A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTD50N03R-1G, an N-Channel Power MOSFET, features a 25V drain-source voltage (Vdss) and a continuous drain current (Id) of 7.8A at 25°C ambient and 45A at 25°C case temperature. This through-hole component utilizes MOSFET technology and is housed in an IPAK package (TO-251-3 Short Leads, TO-251AA). With a maximum on-resistance (Rds On) of 12mOhm at 30A and 11.5V, it offers efficient power handling. The device supports gate drive voltages from 4.5V to 11.5V, with a ±20V maximum gate-source voltage. Key capacitive parameters include input capacitance (Ciss) of 750pF at 12V and gate charge (Qg) of 15 nC at 11.5V. Maximum power dissipation is rated at 1.5W (Ta) and 50W (Tc). The NTD50N03R-1G operates across a temperature range of -55°C to 175°C (TJ) and finds application in power management and switching circuits across various industrial sectors.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.8A (Ta), 45A (Tc) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 30A, 11.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 11.5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 11.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 750 pF @ 12 V |
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