NTD50N03R-001
MOSFET N-CH 25V 7.8A/45A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTD50N03R-001 is an N-Channel Power MOSFET designed for demanding applications. This through-hole component features a drain-source voltage (Vdss) of 25 V. The continuous drain current (Id) is specified at 7.8 A at ambient temperature (Ta) and 45 A at case temperature (Tc). Power dissipation is 1.5 W (Ta) and 50 W (Tc). The Rds On is a maximum of 12 mOhm at 30 A and 11.5 V. Key parameters include a gate charge (Qg) of 15 nC at 11.5 V and input capacitance (Ciss) of 750 pF at 12 V. It operates across a temperature range of -55°C to 175°C. This device is housed in an IPAK package (TO-251-3 Short Leads, TO-251AA). Typical industries utilizing this component include automotive and industrial power conversion.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.8A (Ta), 45A (Tc) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 30A, 11.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 11.5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 11.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 750 pF @ 12 V |
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