NTD50N03R
MOSFET N-CH 25V 7.8A/45A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD50N03R is an N-Channel Power MOSFET designed for robust performance in demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 25 V and offers a continuous drain current capability of 7.8A at ambient temperature (Ta) and 45A at case temperature (Tc). Its low on-resistance (Rds On) of 12 mOhm at 30A and 11.5V gate-source voltage ensures efficient power transfer with minimal losses.
This MOSFET is packaged in a TO-252-3, DPAK (SC-63) surface-mount package, facilitating integration into compact high-density designs. Key electrical parameters include a maximum gate charge (Qg) of 15 nC at 11.5V and a maximum input capacitance (Ciss) of 750 pF at 12V. The device supports a wide drive voltage range from 4.5V to 11.5V and has a maximum gate-source voltage (Vgs) of ±20V. With a maximum power dissipation of 1.5W (Ta) and 50W (Tc), it is suitable for use in automotive and industrial power management systems. The operating temperature range is from -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.8A (Ta), 45A (Tc) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 30A, 11.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 11.5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 11.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 750 pF @ 12 V |
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