NTD4979NT4G
MOSFET N-CH 30V 9.4A/41A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTD4979NT4G is an N-Channel Power MOSFET designed for demanding applications. This device offers a 30V drain-to-source voltage (Vdss) and a continuous drain current capability of 9.4A at 25°C ambient (Ta) and 41A at 25°C case (Tc). Featuring a low on-resistance of 9mOhm maximum at 30A and 10V, it ensures efficient power handling with a maximum power dissipation of 1.38W (Ta) and 26.3W (Tc). The gate threshold voltage (Vgs(th)) is 2.5V maximum, with drive voltage options from 4.5V to 10V enabling flexible driving. Key parameters include a maximum gate charge (Qg) of 16.5 nC and input capacitance (Ciss) of 837 pF. The NTD4979NT4G is housed in a TO-252-3, DPAK surface mount package and operates within a temperature range of -55°C to 175°C. This component is suitable for use in power management, automotive, and industrial applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.4A (Ta), 41A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.38W (Ta), 26.3W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 16.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 837 pF @ 15 V |
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