NTD4979N-35G
MOSFET N-CH 30V 9.4A/41A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD4979N-35G is an N-Channel Power MOSFET designed for efficient power switching applications. This device features a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) capability of 9.4A at 25°C ambient and 41A at 25°C case temperature. With a low on-resistance (Rds(on)) of 9mOhm maximum at 30A and 10V gate drive, it minimizes conduction losses. The NTD4979N-35G supports a wide gate drive voltage range from 4.5V to 10V. Maximum power dissipation is rated at 1.38W (Ta) and 26.3W (Tc). Key parameters include a gate charge (Qg) of 16.5 nC maximum and input capacitance (Ciss) of 837 pF maximum. Packaged in an IPAK (TO-251-3 Short Leads) with through-hole mounting, this MOSFET is suitable for use in automotive and industrial power management systems. It operates across a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.4A (Ta), 41A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.38W (Ta), 26.3W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 16.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 837 pF @ 15 V |
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