NTD4970NT4G
MOSFET N-CH 30V 8.5A/36A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD4970NT4G is an N-Channel Power MOSFET designed for efficient power switching applications. This device features a drain-source voltage (Vdss) of 30 V and supports continuous drain currents of 8.5 A at ambient temperature and 36 A at case temperature. With a low on-resistance (Rds(on)) of 11 mOhm at 30 A and 10 Vgs, it minimizes conduction losses. The gate threshold voltage (Vgs(th)) is a maximum of 2.5 V at 250 µA, with a drive voltage range of 4.5 V to 10 V for optimal Rds(on) performance. Maximum power dissipation is 1.38 W (Ta) and 24.6 W (Tc). Key parameters include a maximum gate charge (Qg) of 8.2 nC at 4.5 V and a maximum input capacitance (Ciss) of 774 pF at 15 V. Operating temperature ranges from -55°C to 175°C. The NTD4970NT4G is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, supplied on tape and reel. This component is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.5A (Ta), 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.38W (Ta), 24.6W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 774 pF @ 15 V |
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