NTD4970N-35G
MOSFET N-CH 30V 8.5A/36A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD4970N-35G is an N-Channel Power MOSFET designed for efficient power switching applications. This device features a 30V drain-source breakdown voltage and offers a continuous drain current capability of 8.5A at ambient temperature (Ta) and 36A at case temperature (Tc). Its low on-resistance is specified as 11mOhm maximum at 30A and 10V gate-source voltage. The NTD4970N-35G supports a wide gate drive voltage range with a threshold voltage (Vgs(th)) of 2.5V maximum.
Key specifications include a gate charge (Qg) of 8.2 nC maximum at 4.5V and an input capacitance (Ciss) of 774 pF maximum at 15V. Power dissipation is rated at 1.38W (Ta) and 24.6W (Tc). This MOSFET utilizes through-hole mounting in a TO-251-3 Stub Leads, IPAK package. The operating temperature range is -55°C to 175°C (TJ). This component is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.5A (Ta), 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.38W (Ta), 24.6W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 774 pF @ 15 V |
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