NTD4970N-1G
MOSFET N-CH 30V 38A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD4970N-1G is an N-Channel Power MOSFET designed for demanding power switching applications. This TO-251AA packaged device features a Drain-to-Source Voltage (Vdss) of 30 V and supports a continuous Drain Current (Id) of 8.5 A at 25°C ambient temperature, scaling to 36 A under typical case temperature conditions. With a low on-resistance of 11 mOhm at 30 A and 10 V Vgs, it minimizes conduction losses. The device exhibits a gate charge (Qg) of 8.2 nC maximum at 4.5 V and an input capacitance (Ciss) of 774 pF maximum at 15 V. It is suitable for use in industrial automation, power supply units, and automotive systems due to its robust performance and through-hole mounting configuration.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.5A (Ta), 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 30A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | IPAK |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 774 pF @ 15 V |
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