NTD4969N-35G
MOSFET N-CH 30V 9.4A/41A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD4969N-35G is an N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a 30V drain-source breakdown voltage (Vdss) and offers a continuous drain current (Id) of 9.4A at 25°C ambient temperature and 41A at 25°C case temperature. With a low on-resistance (Rds On) of 9mOhm at 30A and 10V, it minimizes conduction losses. The NTD4969N-35G supports a gate drive range from 4.5V to 10V and has a maximum gate charge (Qg) of 9 nC at 4.5V. It exhibits an input capacitance (Ciss) of 837 pF at 15V. The component is housed in a TO-251-3 Stub Leads, IPAK package, suitable for through-hole mounting. Its maximum power dissipation is 1.38W (Ta) and 26.3W (Tc). This MOSFET is utilized across various industries including automotive and industrial power management.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.4A (Ta), 41A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.38W (Ta), 26.3W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 837 pF @ 15 V |
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