NTD4969N-1G
MOSFET N-CH 30V 41A IPAK-4Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTD4969N-1G is a N-Channel MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 30 V and a high continuous drain current capability of 41 A (Tc), with a thermal-aware rating of 9.4 A (Ta). The low on-resistance of 9 mOhm @ 30A, 10V (Rds On) minimizes conduction losses. Key parameters include a Gate Charge (Qg) of 9 nC (Max) @ 4.5 V and an Input Capacitance (Ciss) of 837 pF (Max) @ 15 V, facilitating efficient switching. Mounting is via Through Hole in a TO-251-3 Short Leads, IPAK package. This device is suitable for use in power management, automotive, and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.4A (Ta), 41A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 30A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | IPAK |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 837 pF @ 15 V |
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