NTD4965N-35G
MOSFET N-CH 30V 13A/68A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTD4965N-35G is an N-Channel power MOSFET designed for high-efficiency switching applications. This component features a 30V drain-source voltage (Vdss) and offers continuous drain current capabilities of 13A at 25°C ambient (Ta) and 68A at 25°C case (Tc). The device exhibits a maximum Rds(on) of 4.7mOhm at 30A and 10V gate-source voltage (Vgs). Key parameters include a gate charge (Qg) of 17.2 nC maximum at 4.5V Vgs and input capacitance (Ciss) of 1710 pF maximum at 15V drain-source voltage. With a maximum power dissipation of 1.39W (Ta) and 38.5W (Tc), the NTD4965N-35G is suitable for use in automotive, industrial, and power supply applications. It is packaged in a TO-251-3 Stub Leads, IPAK (through-hole) configuration and operates within a temperature range of -55°C to 175°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta), 68A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.7mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.39W (Ta), 38.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 17.2 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1710 pF @ 15 V |
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