NTD4963NT4G
MOSFET N-CH 30V 8.1A/44A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD4963NT4G is an N-Channel Power MOSFET designed for demanding applications. This component offers a continuous drain current capability of 8.1A at 25°C ambient temperature and 44A at 25°C case temperature, with a drain-to-source voltage (Vdss) of 30V. Key performance characteristics include a maximum Rds(On) of 9.6mOhm at 30A and 10V gate-source voltage. The device supports a gate drive range from 4.5V to 10V, with a maximum gate-source voltage rating of ±20V. It features a low threshold voltage of 2.5V at 250µA. The NTD4963NT4G utilizes surface mount technology, housed in a TO-252-3, DPAK package. It is supplied on tape and reel for automated assembly, and operates within an extended temperature range of -55°C to 175°C. This MOSFET is suitable for use in power management, automotive, and industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.1A (Ta), 44A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.6mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.1W (Ta), 35.7W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 16.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1035 pF @ 12 V |
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