NTD4963N-35G
MOSFET N-CH 30V 8.1A/44A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD4963N-35G is an N-Channel Power MOSFET designed for demanding applications. This device features a 30V drain-source breakdown voltage and offers a continuous drain current of 8.1A at 25°C ambient temperature and 44A at 25°C case temperature. With a low on-resistance of 9.6mOhm maximum at 30A and 10V gate-source voltage, it ensures efficient power transfer. The MOSFET is housed in an IPAK (TO-251-3 Stub Leads) package, suitable for through-hole mounting. Key parameters include a gate charge of 16.2 nC maximum at 10V and an input capacitance of 1035 pF maximum at 12V. The operating junction temperature range is -55°C to 175°C. This component is utilized in power management, automotive, and industrial automation sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.1A (Ta), 44A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.6mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.1W (Ta), 35.7W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 16.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1035 pF @ 12 V |
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