NTD4960NT4G
MOSFET N-CH 30V 8.9A/55A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD4960NT4G is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) capability of 8.9A at 25°C ambient temperature, scaling to 55A under case temperature conditions. With a low Rds(On) of 8mOhm at 30A and 10V Vgs, it ensures efficient power transfer. The device operates with a gate drive voltage range from 4.5V to 10V and boasts a maximum gate charge of 22nC at 10V. Input capacitance (Ciss) is specified at a maximum of 1300pF at 15V. The NTD4960NT4G is housed in a TO-252-3, DPAK package for surface mounting, offering a maximum power dissipation of 1.07W (Ta) or 35.71W (Tc). Its operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for use in automotive and industrial power management applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.9A (Ta), 55A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.07W (Ta), 35.71W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 15 V |
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