NTD4960N-1G
MOSFET N-CH 30V 8.9A/55A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD4960N-1G is an N-Channel Power MOSFET designed for demanding applications. This device features a 30 V drain-source voltage (Vdss) and offers a continuous drain current capability of 8.9 A at 25°C ambient and 55 A at 25°C case temperature. With a low on-resistance of 8 mOhm maximum at 30 A and 10 V gate-source voltage, it minimizes conduction losses. The NTD4960N-1G boasts a maximum power dissipation of 1.07 W (Ta) and 35.71 W (Tc), operating within a junction temperature range of -55°C to 175°C. Key parameters include a gate charge (Qg) of 22 nC (max) at 10 V and input capacitance (Ciss) of 1300 pF (max) at 15 V. This MOSFET is housed in a TO-251-3 Short Leads (IPAK) package, suitable for through-hole mounting. Its robust performance makes it a suitable component for automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.9A (Ta), 55A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.07W (Ta), 35.71W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 15 V |
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