NTD4959NHT4G
MOSFET N-CH 30V 9A/58A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi NTD4959NHT4G is a 30V N-Channel Power MOSFET designed for efficient power switching applications. This component offers a continuous drain current of 9A at ambient temperature and 58A at case temperature, with a maximum power dissipation of 1.3W (Ta) and 52W (Tc). Key specifications include a low on-resistance of 9mOhm at 30A and 10V, and a gate charge of 44 nC at 11.5V. The NTD4959NHT4G features a drain-source breakdown voltage of 30V and operates over an extended temperature range of -55°C to 175°C. It is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package for surface mounting. This MOSFET is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta), 58A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta), 52W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 11.5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 11.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2155 pF @ 12 V |
Request a Quote
Clients Also Buy
FCP850N80Z
MOSFET N-CH 800V 8A TO220-3
MCH3376-TL-W
MOSFET P-CH 20V 1.5A 3MCPH
MCH3476-TL-H
MOSFET N-CH 20V 2A SC70FL/MCPH3
