NTD4913NT4G
MOSFET N-CH 30V 7.7A/32A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD4913NT4G is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 30 V and offers continuous drain current (Id) capabilities of 7.7 A at ambient temperature (Ta) and 32 A at case temperature (Tc). With a maximum power dissipation of 1.36 W (Ta) and 24 W (Tc), this MOSFET is suitable for power management in automotive and industrial sectors. Key specifications include a low Rds On of 10.5 mOhm at 30 A and 10 V, a gate charge (Qg) of 13 nC at 10 V, and an input capacitance (Ciss) of 1013 pF at 15 V. The NTD4913NT4G is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package and operates across a wide temperature range of -55°C to 175°C. It supports drive voltages from 4.5 V to 10 V and a maximum gate-source voltage (Vgs) of ±20V. This device is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.7A (Ta), 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 10.5mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.36W (Ta), 24W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1013 pF @ 15 V |
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