NTD4910NT4G
MOSFET N-CH 30V 8.2A/37A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD4910NT4G is an N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a 30 V drain-source voltage (Vdss) and offers a continuous drain current of 8.2 A at 25°C ambient temperature and 37 A at 25°C case temperature. It exhibits a low on-resistance (Rds On) of 9 mOhm maximum at 30 A and 10 V gate-source voltage. The NTD4910NT4G supports gate drive voltages from 4.5 V to 10 V and has a maximum gate charge of 15.4 nC. Input capacitance (Ciss) is rated at 1203 pF maximum at 15 V. With a maximum power dissipation of 1.37 W (Ta) and 27.3 W (Tc), this MOSFET operates across a temperature range of -55°C to 175°C. The device is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63, suitable for surface mounting and supplied on tape and reel. This component is commonly utilized in power management, automotive systems, and industrial motor control.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.2A (Ta), 37A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.37W (Ta), 27.3W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 15.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1203 pF @ 15 V |
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