NTD4910N-35G
MOSFET N-CH 30V 8.2A/37A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTD4910N-35G, an N-Channel Power MOSFET, features a 30V drain-source breakdown voltage and a low on-resistance of 9mOhm at 30A and 10V Vgs. This device offers continuous drain current capabilities of 8.2A at 25°C ambient and 37A at 25°C case temperature. With a maximum power dissipation of 1.37W (ambient) and 27.3W (case), it is suitable for demanding applications. Key parameters include a gate charge of 15.4 nC at 10V Vgs and input capacitance of 1203 pF at 15V Vds. The NTD4910N-35G is housed in an IPAK (TO-251-3 Stub Leads) package, designed for through-hole mounting, and operates within a temperature range of -55°C to 175°C. This component finds application in various industrial and automotive power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.2A (Ta), 37A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.37W (Ta), 27.3W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 15.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1203 pF @ 15 V |
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