NTD4909NAT4G
MOSFET N-CH 30V 8.8A/41A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi NTD4909NAT4G, a N-Channel MOSFET designed for surface mount applications. This component features a drain-to-source voltage (Vdss) of 30 V and supports continuous drain current (Id) of 8.8A at ambient temperature (Ta) and 41A at case temperature (Tc). The on-resistance (Rds On) is a maximum of 8mOhm at 30A and 10V. Key electrical characteristics include a maximum gate charge (Qg) of 17.5 nC at 10V and a maximum input capacitance (Ciss) of 1314 pF at 15V. The device is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63, supplied on tape and reel. This MOSFET is commonly utilized in power management applications across various industries.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.8A (Ta), 41A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | DPAK |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 17.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1314 pF @ 15 V |
Request a Quote
Clients Also Buy
FCP850N80Z
MOSFET N-CH 800V 8A TO220-3
MCH3376-TL-W
MOSFET P-CH 20V 1.5A 3MCPH
MCH3476-TL-H
MOSFET N-CH 20V 2A SC70FL/MCPH3
