NTD4909NA-35G
MOSFET N-CH 30V 8.8A/41A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTD4909NA-35G is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous drain current capability of 8.8A at 25°C ambient (Ta) and 41A at 25°C case (Tc). The low Rds(on) of 8mOhm at 30A and 10V gate-source voltage ensures minimal conduction losses. With a maximum gate charge (Qg) of 17.5 nC at 10V and input capacitance (Ciss) of 1314 pF at 15V, it offers favorable switching characteristics. The NTD4909NA-35G is housed in a TO-251-3 Stub Leads, IPAK package, suitable for through-hole mounting. This MOSFET is commonly utilized in automotive, industrial power control, and power supply designs.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.8A (Ta), 41A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | IPAK |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 17.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1314 pF @ 15 V |
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