NTD4909N-35G
MOSFET N-CH 30V 8.8A/41A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD4909N-35G is an N-channel power MOSFET designed for through-hole mounting in an IPAK package (TO-251-3 Stub Leads). This device features a 30V drain-source breakdown voltage and offers a continuous drain current capability of 8.8A at 25°C ambient temperature and 41A under continuous drain current at 25°C case temperature. With a maximum on-resistance of 8 mOhm at 30A and 10V gate-source voltage, it exhibits low conduction losses. The NTD4909N-35G supports gate drive voltages from 4.5V to 10V, with a threshold voltage of 2.2V at 250µA. Key parameters include a maximum gate charge of 17.5 nC and input capacitance of 1314 pF. Power dissipation is rated at 1.37W (ambient) and 29.4W (case). This component is suitable for demanding applications in automotive and industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.8A (Ta), 41A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.37W (Ta), 29.4W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 17.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1314 pF @ 15 V |
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